In a decisive bid to assert its position in the semiconductor arena, Samsung Electronics has set an ambitious goal: to roll out 1.4nm chip manufacturing by 2027, effectively outpacing industry stalwarts TSMC and Intel in the realm of foundry services. This announcement is coupled with Samsung’s assurance of delivering 2nm chips as planned in 2025, underscoring the company’s commitment to technological advancement.
Noteworthy, both the 1.4nm and 2nm chips from Samsung will be crafted using the gate-all-around (GAA) technology, a pioneering development in semiconductor fabrication. This year’s release of 3nm chips marked Samsung’s lead in GAA transistor implementation, propelling the company forward in the race for cutting-edge chip production.
In a significant design overhaul, Samsung’s 1.4nm chip manufacturing blueprint includes the incorporation of additional nanosheets, elevating the count from three to four. This strategic enhancement promises heightened switching capabilities and operational speeds. Moreover, the increased number of nanosheets enables more precise control over electricity flow, leading to reduced heat emission and leakage current. The breakthrough of GAA transistors over fin-shaped field-effect transistor (FinFET) lies in their ability to deliver superior speeds within smaller transistors.
While Samsung has historically trailed TSMC in chip manufacturing, this endeavor signals a spirited foray into the race, setting the stage for an intensified competition in the semiconductor market. Samsung’s early adoption of GAA transistors has positioned it strategically, providing breathing room in a fiercely contested landscape.
However, challenges remain as TSMC maintains its aggressive pursuit of research and development, coupled with an expansive manufacturing footprint. Samsung’s aspiration to challenge the industry leader remains an uphill battle, necessitating continued technological prowess and strategic execution.
