Taiwanese chipmaker Nanya Technology Corp. has partnered with Japan’s Kioxia Holdings Corp. to develop a new DRAM manufacturing process, signaling a push to compete with industry giants in the memory market.
The companies plan to unveil their vertical channel transistor DRAM technology at the International Electron Devices Meeting in December. This new architecture, which uses oxide semiconductors, promises significant improvements in chip density and energy efficiency.
Nanya, Taiwan’s largest DRAM maker outside the top three global producers, is betting on this innovation to strengthen its position in the memory market. The company aims to cater to the growing demand for high-capacity, low-power memory in artificial intelligence, post-5G communications, and Internet of Things applications.
While the partnership marks a step forward for Nanya, it faces stiff competition from industry leaders Samsung Electronics Co., SK Hynix Inc., and Micron Technology Inc. These firms have been investing heavily in advanced memory technologies to maintain their market dominance.
The collaboration also highlights the increasing importance of strategic alliances in the semiconductor industry, as companies seek to share the rising costs and risks associated with developing cutting-edge chip technologies.
