SK Hynix President Justin Kim announced that the company will begin mass production of 12-layer HBM3e memory by the end of this month, a significant step in the competitive high-bandwidth memory (HBM) market. Speaking at Semicon Taiwan, Kim emphasized that AI is still in its early stages, with future developments expected to drastically enhance interaction between humans and machines.
Kim pointed out that the rapid growth of AI comes with major technical challenges, particularly related to power shortages and heat dissipation in data centers. He noted that current infrastructure would need to double power consumption to meet demand, while existing renewable energy sources are unlikely to keep pace.
In response, SK Hynix is focusing on memory products designed for energy efficiency, lower power usage, and higher capacity. The company’s latest offerings, including the HBM3e, LPDDR6, and GDDR7, reflect this commitment to addressing AI’s evolving needs.
Looking ahead, Kim revealed plans for a new production facility in Yongin, South Korea, scheduled to begin operations in 2027, and a plant in Indiana, USA, focusing on advanced HBM packaging by 2028. These investments position SK Hynix to become a key player in the global AI memory ecosystem.
