SK hynix has commenced mass production of the world’s first 12-layer HBM3E memory, boasting a 36GB capacity, the highest in the industry. This advanced memory is aimed at meeting the increasing demands of AI-driven applications. The product enhances processing speeds, reaching 9.6 Gbps, and can read 70 billion parameters 35 times per second when used with AI models like Meta’s Llama 3.
By stacking 12 layers of 3GB DRAM chips at the same thickness as its previous 8-layer model, SK hynix has increased capacity by 50%. The company used Through Silicon Via (TSV) technology and its advanced MR-MUF process to address structural challenges, improving heat dissipation by 10% and ensuring product stability.
As the only company to develop and supply all generations of HBM since 2013, SK hynix aims to maintain its leadership in the AI memory market, supplying these next-generation memory products to customers within the year.
