Samsung Electronics is setting up a test facility for its 7th generation DRAM chips at its Pyeongtaek plant, marking an aggressive push to reclaim its leadership position in the memory market. The new 10-nanometer test line, scheduled to be operational by early 2025, will process approximately 10,000 wafers monthly.
The accelerated timeline for the next-generation memory chips comes as Samsung faces mounting pressure in the high-bandwidth memory (HBM) segment, where it has lost market share to rival SK Hynix. The company aims to begin mass production of these advanced chips by 2026.
Vice Chairman Jeon Young-hyun, who recently took control of both the semiconductor division and memory operations, is driving this strategic shift. Industry analysts say his appointment signals Samsung’s determination to regain technological supremacy through aggressive investment and development.
The test line represents an unusual move for Samsung, as it’s being established while the company is still preparing for mass production of its 6th generation DRAM. The company plans to seek internal approval for mass production of these chips by May 2024.
To support the expansion, Samsung is relocating DRAM specialists from its Hwaseong facility to Pyeongtaek. The company is also advancing its NAND flash memory technology, with plans to develop 400-layer chips at its Pyeongtaek Plant 1.
