As the demand for AI chips continues to surge, memory giants are advancing their High Bandwidth Memory (HBM) roadmaps aggressively. SK hynix, a leader in the HBM3e market, has revealed ambitious plans for its upcoming HBM4e technology. Reports from Wccftech and ET News highlight SK hynix’s strategy to introduce an HBM variant capable of supporting multiple functionalities, including computing, caching, and network memory.
Though still in the conceptual stage, SK hynix has begun acquiring semiconductor design intellectual properties (IPs) to support its objectives. According to ET News, the company aims to establish the groundwork for a versatile HBM architecture with its forthcoming HBM4. This new design will feature an integrated memory controller, enabling new computing capabilities with the 7th-generation HBM4e memory.
The integration approach by SK hynix will unify the package, reducing structural gaps and thereby ensuring faster transfer speeds and higher power efficiencies. This innovative design is expected to set a new standard in memory performance and efficiency.
In April, SK hynix announced a collaboration with TSMC to produce next-generation HBM and enhance logic and HBM integration through advanced packaging technology. The development of HBM4 is slated for mass production starting in 2026, marking a significant milestone in the company’s roadmap.
As more details about HBM4 emerge, SK hynix is poised to extend its market leadership from HBM3 to HBM4 by addressing the semiconductor aspects of the HBM structure. According to Wccftech, this strategic move will further solidify SK hynix’s position in the HBM market.
TrendForce’s analysis earlier this year indicated that the current HBM market landscape is primarily focused on HBM3. NVIDIA’s upcoming B100 or H200 models will incorporate advanced HBM3e, signaling the next step in memory technology. SK hynix currently meets the majority of HBM3 supply for NVIDIA’s H100 solution, although there is a supply shortfall due to the high demand in the AI market.
In late May, SK hynix disclosed yield details for HBM3e, reporting a 50% reduction in the time needed for mass production and nearing an 80% target yield, as noted by the Financial Times. These advancements underscore SK hynix’s commitment to innovation and its strategic position in the rapidly evolving memory market.
