SK Hynix has shipped the world’s first 12-layer HBM4 memory samples to major customers, strengthening its position in the artificial intelligence chip market. The South Korean memory giant announced it has delivered these samples ahead of schedule and begun customer certification, with mass production planned for the second half of 2025.
The new 12-layer HBM4 samples deliver bandwidth exceeding 2TB/s, which SK Hynix claims processes over 400 full-HD movies per second—60% faster than the previous HBM3E generation. The company achieved 36GB capacity, the highest among 12-layer High Bandwidth Memory products, using its Advanced MR-MUF process technology.
This development aligns with reports that SK Hynix’s HBM4 will power Nvidia’s next-generation AI chip, codenamed Rubin, expected to launch in Q3 2025. The company has reportedly secured exclusive supply of 12-layer HBM3E for Nvidia’s GB300 Blackwell Ultra chips.
SK Hynix appears to be pulling ahead of competitors in the high-stakes memory race. Business Post reported that while Micron completed 12-stack HBM3E development last September, it hasn’t secured initial Nvidia orders. Samsung, despite positive feedback from Nvidia, may not receive qualification for its HBM3E products until late May or early June, according to Alpha Economy.
