Samsung Electronics plans to expand production capacity for its sixth-generation 1c DRAM to 200,000 wafers monthly by the end of 2026, signaling an ambitious push to reclaim dominance in the memory chip market. The Korean tech giant aims to install 60,000 wafers of monthly capacity by year-end, add another 80,000 wafers by the second quarter of 2026, and complete the expansion with an additional 60,000 wafers in the fourth quarter.
The aggressive timeline represents roughly one-third of Samsung’s total DRAM production capacity, which currently stands at 650,000 to 700,000 wafers monthly. The expansion exceeds the 130,000 wafers Samsung added during the 2022 semiconductor boom, underscoring management’s confidence in demand for the advanced memory technology. Samsung will achieve the capacity increase through upgrading existing production lines and constructing new facilities at its Pyeongtaek P4 campus.
The 1c generation DRAM features circuit line widths below 11 nanometers and incorporates multiple layers of extreme ultraviolet lithography. Samsung lost its three-decade position as DRAM market leader to SK Hynix in the first quarter of this year, primarily due to struggles qualifying its high-bandwidth memory products with major customers like Nvidia. The setback stemmed from Samsung’s difficulties ramping HBM3E production, which directly impacts overall DRAM shipment volumes.
The capacity expansion aligns with Samsung’s recently announced 450 trillion won ($310 billion) five-year investment plan. Samsung stated it would strengthen production capabilities to respond swiftly to market changes as AI-driven demand expands memory requirements. Artificial intelligence applications have created acute shortages across both specialized HBM and conventional DRAM products, with customers reportedly placing orders for chips not yet manufactured.
