Nanya Technology, a prominent DRAM manufacturer, addressed its shareholders today with a report from Chairman Chia-Chau Wu outlining the company’s performance and future plans. Despite adverse market conditions, geopolitical tensions, and the ongoing US-China trade conflict, the company reported a transition from profit to loss last year.
Wu emphasized Nanya’s robust technological capabilities, highlighting plans to introduce products using the advanced 10nm 1B process this year. Additionally, the 10nm 1C process is on track, with the first product design expected by year-end and trial production slated for early next year. The company aims to enter the high-capacity DRAM module market by 2026, leveraging miniaturization and Through-Silicon Via (TSV) processes to meet server market demands.
The 1B process products are pivotal for Nanya’s expansion this year. Wu noted the promotion of 8Gb/4Gb DDR4 products for the personal computer and bare die application markets. Concurrently, the 16Gb DDR5 will target mainstream markets, including personal computers and servers.
In addition to the three products under the second-generation 10nm (1B) process, Nanya is developing four other products: 16Gb DDR5 and its miniaturized versions, 16Gb LPDDR4, 16Gb LPDDR5, and 4Gb DDR3. These are set to enter trial production gradually. The company is also advancing its TSV process technology, aiming to combine miniaturized DDR5 with TSV to produce high-capacity DRAM modules for the server market.
The third-generation 10nm (1C) process technology is progressing, with the first 16Gb DDR5 product design expected by the end of the year and trial production beginning early next year.
To support these advancements and the construction of new facilities, Nanya Technology has allocated approximately TWD 26 billion (USD 805.2 million) for capital expenditure this year, with less than half dedicated to production equipment. Wu reiterated the company’s commitment to investing in research and development during the industry’s adjustment period to enhance future competitiveness.
