SK Hynix has positioned itself as the exclusive supplier of 12-high HBM3E memory for NVIDIA’s upcoming GB300 AI chip, according to South Korean media outlet Business Post. The development strengthens the Korean memory maker’s lead in the high-bandwidth memory market ahead of rival manufacturers.
The GB300, expected to be unveiled at NVIDIA’s GTC 2025 conference, will reportedly feature 288GB of memory using HBM3E 12-layer stacking technology. Industry sources indicate SK Hynix could further cement its advantage with its HBM4 memory powering NVIDIA’s subsequent Rubin chip, slated for production in 2026.
Competitors face significant challenges in catching up. Micron reportedly failed to secure initial supply orders despite completing its 12-stack HBM development last September. Samsung, while receiving positive feedback from NVIDIA, isn’t expected to qualify its 8-layer and 12-layer products until late May or early June, according to Alpha Economy.
SK Hynix’s head start stems from its early mass production timeline – beginning HBM3E 8-layer production in March 2024 and 12-layer production last September. This gives the Korean manufacturer a substantial lead as Samsung will likely need six additional months to fully ramp its HBM3E production.
