Samsung Electronics Co. pushed the boundaries of memory technology with its new 400-layer NAND flash chip, surpassing rival SK Hynix Inc.’s recent 321-layer achievement. The world’s largest memory maker has started moving the technology to production lines at its Pyeongtaek facility.
The South Korean tech giant plans to begin mass production in the second half of 2025, with some analysts suggesting output could start as early as the second quarter. The company will present technical details of its 1-terabit triple-level cell chip at next year’s International Solid-State Circuits Conference.
Samsung is bolstering production capacity across its facilities. Its Pyeongtaek campus will add new production lines for 286-layer chips, targeting monthly output of 30,000 to 40,000 wafers. The Xi’an plant in China is upgrading from 128-layer to 236-layer technology.
The development comes as memory chip prices remain volatile. The fixed price for 128Gb multi-level cell products dropped 29.8% to $2.16 in November. While overall NAND prices are projected to decline up to 8% in the fourth quarter, enterprise solid-state drive prices could rise 5%, according to TrendForce.
Samsung currently commands 36.9% of the global NAND market, facing competition from SK Hynix, which began mass-producing 238-layer chips last year.
